AOL1404 20v n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 45a r ds(on) (at v gs =4.5v) < 4m ? r ds(on) (at v gs = 2.5v) < 5.6m ? 100% uis tested100% r g tested symbolv ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-statesteady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.8 60 2.5 power dissipation b p d w power dissipation a p dsm w t a =70c 60 1.3 t a =25c a t a =25c i dsm a t a =70c i d 4535 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 14 continuous drain current 162 18 a 57 the AOL1404 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v v 12 gate-source voltage drain-source voltage 20 units maximum junction-to-ambient a c/w r ja 2050 25 junction and storage temperature range -55 to 175 c thermal characteristics 160 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.1 30 t c =100c g d s ultraso-8 tm top view bottom view g d s g s rev 0: jan 2010 www.aosmd.com page 1 of 6 downloaded from: http:///
AOL1404 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.5 1 1.6 v i d(on) 160 a 3.3 4 t j =125c 4.6 5.6 4.5 5.6 m ? g fs 50 s v sd 0.7 1 v i s 45 a c iss 3080 3860 4630 pf c oss 520 740 960 pf c rss 350 580 810 pf r g 0.6 1.4 2.1 ? q g (4.5v) 28 36 43 nc q gs 7 9 11 nc q gd 71 21 7n c t d(on) 7n s t r 8n s t d(off) 70 ns t f 18 ns t rr 13 17 20 ns q rr 29 36 43 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =4.5v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 12v zero gate voltage drain currentgate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =1a,v gs =0v v ds =5v, i d =20a v gs =2.5v, i d =20a v gs =10v, v ds =10v, r l =0.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =20a gate source chargegate drain charge body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous currentinput capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise timeturn-off delaytime a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it.b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 0: jan 2010 www.aosmd.com page 2 of 6 downloaded from: http:///
AOL1404 typical electrical and thermal characteristic s 17 52 10 0 18 40 0 20 40 60 80 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =2.5v i d =20a v gs =4.5v i d =20a 1 2 3 4 5 6 7 8 9 10 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =1.5v 2v 4.5v 2.5v rev 0: jan 2010 www.aosmd.com page 3 of 6 downloaded from: http:///
AOL1404 typical electrical and thermal characteristic s 17 52 10 0 18 40 0 1 2 3 4 5 0 1 02 03 04 0 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =10v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 s r jc =2.5c/w rev 0: jan 2010 www.aosmd.com page 4 of 6 downloaded from: http:///
AOL1404 typical electrical and thermal characteristic s 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) 0 20 40 60 80 100 0.0001 0.01 1 100 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =60c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 0: jan 2010 www.aosmd.com page 5 of 6 downloaded from: http:///
AOL1404 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: jan 2010 www.aosmd.com page 6 of 6 downloaded from: http:///
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